A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage

Automatic in-situ measurement of thermal resistance for GaN HEMTs

Characterization of trap evolution in GaN-based HEMTs under pulsed stress

Degradation analysis of GaN-based high–electron-mobility transistors under different stresses in semi-on state conditions

Investigation of Electrical Characteristics and Trapping Effects in p-GaN Gate HEMTs Under Electron Irradiation

Online Temperature Measurement Method for SiC MOSFET Device Based on Gate Pulse

Study of the Influence of Different Gate Oxide Traps on Threshold Voltage Drift of SiC MOSFET Based on Transient Current

Analysis of the Degradation of Depletion-Mode GaN High-Electron-Mobility Transistors under Reverse Pulse Electrical Stress Using the Voltage-Transient Method

A novel evaluation method to calibrate structural function

A numerical calibration of structure-function transient thermal measurement based on Cauer RC network

A thermal boundary resistance measurement method based on a designed chip with the heat source separated from the temperature sensor

Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT With Improved Performance Trade-Off

Corrigendum to “Implementing hardware primitives based on memristive spatiotemporal variability into cryptography applications” [Chip 2 (2023) 100040]

Design and implementation of microcirculation cooling device for microelectronic devices based on electrostatic force

Effects of Static and Repetitive Uniaxial Bending Strains on the Electrical Properties and Trap Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors

Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs

FPGA-Based Implementation of Reverse Electrical Pulse Stress and Measurement system for Gallium Nitride High-Electron-Mobility Transistors

Investigation of trap characteristics under the inverse piezoelectric effect in AlGaN/GaN HEMT devices at room temperature and low temperature

Investigation on the passivation at the GeOx/Ge interface trap with high oxidation state in GeOx formed by ozone oxidation

Measurement Deviation of the Virtual Junction Temperature by the Saturation Voltage Drop Method for Insulated-Gate Bipolar Transistors

Measuring Double-Sided Thermal Resistance of Press-Pack IGBT Modules Based on Ratio of Double-Sided Heat Dissipation

Research on junction temperature of SiC MOSFET module

Research on Transient Temperature Rise Measurement Method for Semiconductor Devices Based on Photothermal Reflection

SiC MOSFET Trap Characterization Based on the Self-built Test Platform

Study of the temperature distribution in insulated gate bipolar transistor module under different test conditions

Study Of Temperature Inhomogeneity Of Insulated Gate Bipolar Transistor Module Based On Electrical Method

Trap characteristics of hafnium oxide-based ferroelectric field-effect transistors measured by using a current transient method

Trap characterization of GaN High-electron-mobility Transistors Based on the Transient Drain Voltage

Trap Characterization of Trench-Gate SiC MOSFETs based on Transient Drain Current