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Investigation of trap characteristics under the inverse piezoelectric effect in AlGaN/GaN HEMT devices at room temperature and low temperature
2023
期刊
Semiconductor Science and Technology
- 卷 38
- 期 5
- 页码 055008
- IOP Publishing
- ISSN: 0268-1242
- DOI: 10.1088/1361-6641/acc3bd