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Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs
2023
期刊
IEEE Transactions on Electron Devices
作者
Shijie Pan
· Yamin Zhang
· Shiwei Feng
· Xuan Li
· Kun Bai
· Xiaozhuang Lu
· Meng Zhang
· Zhou Zhou
- 卷 70
- 期 7
- 页码 3475-3482
- Institute of Electrical and Electronics Engineers (IEEE)
- ISSN: 0018-9383
- DOI: 10.1109/ted.2023.3278614
