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Analysis of the Degradation of Depletion-Mode GaN High-Electron-Mobility Transistors under Reverse Pulse Electrical Stress Using the Voltage-Transient Method
2023
期刊
IEEE Transactions on Device and Materials Reliability
- 页码 1-1
- Institute of Electrical and Electronics Engineers (IEEE)
- ISSN: 1530-4388
- DOI: 10.1109/tdmr.2023.3253957
