Novel Semiconductor Devices and Reliability Lab
分享到
Trap Characterization of Trench-Gate SiC MOSFETs based on Transient Drain Current
2023
期刊
IEEE Transactions on Power Electronics
- 页码 1-9
- Institute of Electrical and Electronics Engineers (IEEE)
- ISSN: 0885-8993
- DOI: 10.1109/tpel.2023.3242950
