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Determining Drain Current Characteristics and Channel Temperature Rise in GaN HEMTs

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Transient thermal characteristics related to catastrophic optical damage in high power AlGaAs/GaAs laser diodes

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Assessment of pulse conditions effects on reliability in GaN-based high electron mobility transistors by transient temperature measurements

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

The degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Quick screen of thermal resistance for batching high brightness LEDs

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Determination of channel temperature for AlGaN/GaN HEMTs by high spectral resolution micro-Raman spectroscopy

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Degradation and recovery property of Schottky Barrier height of AlGaN/GaN high electron mobility transistors under reverse AC electrical stress

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Identifying the Traps in the Channel Region in GaN-based HEMTs Using a Nonmonotone Drain Current Transient

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

The channel temperature dependence of drain transient response in AlGaN/GaN HEMTs

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

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