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Thermal investigation of LED array with multiple packages based on the superposition method

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Variation of Dominant Degradation Mechanism in AlGaN Barrier Layer With Different Voltage Stress on the Gate of AlGaN/GaN High Electron Mobility Transistors

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Measuring temperature in GaN-based high electron mobility transistors by cathodoluminescence spectroscopy

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Evaluation of the drain—source voltage effect on AlGaAs/InGaAs PHEMTs thermal resistance by the structure function method

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Self-heating and traps effects on the drain transient response of AlGaN/GaN HEMTs

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Cycled Thermomechanical Failure in 808-nm High-Power AlGaAs/GaAs Laser Diode Bars

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Determining Drain Current Characteristics and Channel Temperature Rise in GaN HEMTs

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Transient thermal characteristics related to catastrophic optical damage in high power AlGaAs/GaAs laser diodes

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Assessment of pulse conditions effects on reliability in GaN-based high electron mobility transistors by transient temperature measurements

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

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