Novel Semiconductor Devices and Reliability Lab
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Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs
2013
期刊
Microelectronics Reliability
- 卷 53
- 期 5
- 页码 694-700
- Elsevier BV
- ISSN: 0026-2714
- DOI: 10.1016/j.microrel.2013.02.004
