Novel Semiconductor Devices and Reliability Lab
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Determining Drain Current Characteristics and Channel Temperature Rise in GaN HEMTs
2014
期刊
IEEE Transactions on Device and Materials Reliability
- 卷 14
- 期 4
- 页码 978-982
- Institute of Electrical and Electronics Engineers (IEEE)
- ISSN: 1530-4388
- DOI: 10.1109/tdmr.2014.2356233
