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Effect of substrate thinning on the electronic transport characteristics of AlGaN/GaN HEMTs

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Evaluation of the Schottky Contact Degradation on the Temperature Transient Measurements in GaN HEMTs

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Junction Temperature Measurement Method for Power mosfets Using Turn-On Delay of Impulse Signal

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Study of Heat Transport Behavior in GaN-Based Transistors by Schottky Characteristics Method

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Effect of poling process on resistive switching in Au/BiFeO3/SrRuO3 structures

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Thermal time-constant spectrum extraction method in AlGaN/GaN HEMTs

Novel Semiconductor Devices and Reliability Lab , 北京工业大学