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Bipolar Resistive Switching Effect in BiFeO3/Nb:SrTiO3 Heterostructure by RF Sputtering at Room Temperature

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

A current-transient method for identifying the spatial positions of traps in GaN-based HEMTs

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Substrate thinning and external stress effect on the output characteristics of AlGaN/GaN HEMTs

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Fatigue behavior of resistive switching in a BiFeO3 thin film

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

A current transient method for trap analysis in BiFeO3 thin films

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Effect of two-dimensional electron gas on horizontal heat transfer in AlGaN/AlN/GaN heterojunction transistors

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Effect of substrate thinning on the electronic transport characteristics of AlGaN/GaN HEMTs

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Evaluation of the Schottky Contact Degradation on the Temperature Transient Measurements in GaN HEMTs

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Optimized thermal sensor allocation for field-programmable gate array temperature measurements based on self-heating test

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Junction Temperature Measurement Method for Power mosfets Using Turn-On Delay of Impulse Signal

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

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