A current-transient method for identifying the spatial positions of traps in GaN-based HEMTs - Novel Semiconductor Devices and Reliability Lab | LabXing

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Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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A current-transient method for identifying the spatial positions of traps in GaN-based HEMTs

2018

会议 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)

作者 Xiang Zheng · Shiwei Feng · Yamin Zhang

IEEE
ISBN: 9781538662342
DOI: 10.1109/edssc.2018.8487099