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Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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Junction Temperature Measurement Method for Power mosfets Using Turn-On Delay of Impulse Signal

2018
期刊 IEEE Transactions on Power Electronics
  • 卷 33
  • 期 6
  • 页码 5274-5282
  • Institute of Electrical and Electronics Engineers (IEEE)
  • ISSN: 0885-8993
  • DOI: 10.1109/tpel.2017.2736523