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The degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Quick screen of thermal resistance for batching high brightness LEDs

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Determination of channel temperature for AlGaN/GaN HEMTs by high spectral resolution micro-Raman spectroscopy

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Degradation and recovery property of Schottky Barrier height of AlGaN/GaN high electron mobility transistors under reverse AC electrical stress

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Identifying the Traps in the Channel Region in GaN-based HEMTs Using a Nonmonotone Drain Current Transient

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

The channel temperature dependence of drain transient response in AlGaN/GaN HEMTs

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

The thermal characterization of packaged semiconductor device

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Identifying the failure mechanism in accelerated life tests by two-parameter lognormal distributions

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Error correction of theory model in process-stress accelerated test

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

A Method of Thermal Analysis for CMOS Integrated Circuit

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

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