Novel Semiconductor Devices and Reliability Lab
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Degradation and recovery property of Schottky Barrier height of AlGaN/GaN high electron mobility transistors under reverse AC electrical stress
2012
会议
2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology
- IEEE
- ISBN: 9781467324755
- DOI: 10.1109/icsict.2012.6467706
