Novel Semiconductor Devices and Reliability Lab
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The degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress
2013
期刊
Chinese Physics B
- 卷 22
- 期 2
- 页码 027201
- IOP Publishing
- ISSN: 1674-1056
- DOI: 10.1088/1674-1056/22/2/027201
