Determination of channel temperature for AlGaN/GaN HEMTs by high spectral resolution micro-Raman spectroscopy - Novel Semiconductor Devices and Reliability Lab | LabXing

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Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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Determination of channel temperature for AlGaN/GaN HEMTs by high spectral resolution micro-Raman spectroscopy

2012

期刊 Journal of Semiconductors

作者 Guangchen Zhang · Shiwei Feng · Jingwan Li · Yan Zhao · Chunsheng Guo

卷 33
期 4
页码 044003
IOP Publishing
ISSN: 1674-4926
DOI: 10.1088/1674-4926/33/4/044003