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Thermal resistance analysis related to the degradation of GaAs-Based laser diodes

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistors by structure function method

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Error Correction of Theory Model in Process-Stress Accelerated Test

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Evaluation of VDMOS Storage Failure Rate Based on Accelerated Factor

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Thermal stability evaluation of die attach for high brightness LEDs

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Channel Temperature Measurement of AlGaN/GaN HEMTs by Forward Schottky Characteristics

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Analysis of junction temperatures in high-power GaN-based LEDs

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Determination of channel temperature of AlGaN/GaN HEMT by electrical method

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Thermal Analysis of the Multi-Chip Vertical Packaged White LED

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Interface states mediated reverse leakage through metal/AlxGa1−xN∕GaN Schottky diodes

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

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