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A voltage-transient method for characterizing traps in GaN HEMTs

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Junction Temperature measurement of SiC BJT via the voltage drop of V<inf>BC</inf>

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Effect of post-deposition annealing pressure on bipolar resistive switching in RF sputtered BiFeO<inf>3</inf>/Nb:SrTiO<inf>3</inf> heterostructure

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Temperature distribution measurement for chips based on FPGA

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Bipolar Resistive Switching Effect in BiFeO3/Nb:SrTiO3 Heterostructure by RF Sputtering at Room Temperature

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

A current-transient method for identifying the spatial positions of traps in GaN-based HEMTs

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Substrate thinning and external stress effect on the output characteristics of AlGaN/GaN HEMTs

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Fatigue behavior of resistive switching in a BiFeO3 thin film

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

A current transient method for trap analysis in BiFeO3 thin films

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Effect of two-dimensional electron gas on horizontal heat transfer in AlGaN/AlN/GaN heterojunction transistors

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

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