Wake-up effect in Hf<sub>0.4</sub>Zr<sub>0.6</sub>O<sub>2</sub> ferroelectric thin-film capacitors under a cycling electric field
We examined the wake-up effect in a TiN/Hf0.4Zr0.6O2/TiN structure. The increased polarization was affected by the cumulative duration of a switched electric field and the single application time of the field during each switching cycle. The space-charge-limited current was stable, indicating that the trap density did not change during the wake-up. The effective charge density in the space-charge region was extracted from capacitance–voltage curves, which demonstrated an increase in free charges at the interface. Based on changing characteristics in these properties, the wake-up effect can be attributed to the redistribution of oxygen vacancies under the electric field.
期刊:
Chinese Physics B
2022
作者:
Lixing Zhou,Xing Liu,Zhixuan Fang,Zeng Huang,Na Xie,Jinjuan Xiang,Jie Liu,Rui Li,Hui Zhu,Yilin Li
DOI:10.1088/1674-1056/ac5977
Research on the Wake-up Effect of Ferroelectric HfO2-ZrO2 Thin Films
Abstract
The appearance of ferroelectric (FE) and anti-ferroelectric (AFE) properties in HfO2-based thin films is highly intriguing in terms of both the scientific context and practical application in various electronic and energy-related devices. Interestingly, these materials showed a “wake-up effect”, which refers to the increase in remanent polarization with increasing electric field cycling number before the occurrence of the fatigue effect. The appearance of ferroelectric (FE) and anti-ferroelectric (AFE) properties in HfO2-based thin films is highly intriguing in terms of both the scientific context and practical application in various electronic and energy. In this paper, we have conducted an in-depth study on the relationship between the Wake-up effect in HfO2-based films and oxygen vacancies.
期刊:
Journal of Physics: Conference Series
2021
作者:
Zhixuan Fang,Zeng Huang,Na Xie,Si Wang,Jie Liu,Hui Zhu,Rui Li
DOI:10.1088/1742-6596/1907/1/012020
