简历详情

Study of traps in low-temperature polysilicon thin film transistors using a current transient method

Abstract The trap characteristics of low-temperature polysilicon thin film transistors (TFTs) are studied using a current transient method that is based on the trapping and detrapping of charge carriers from the trap sites in the device. Analysis of the measured current transient curve allowed three types of detrapping behavior to be identified, each of which displayed a different time constant, activation energy, and spatial position. This current transient method can be integrated into the negative bias temperature instability stress test used for the reliability study. The peak amplitudes of the traps increase because of the stress applied in the test, thus demonstrating that the degradation mechanism of the TFTs is closely related to changes in the traps in these devices.

期刊: Semiconductor Science and Technology  2021
作者: Bo Liu,Lixing Zhou,Yamin Zhang,Chunsheng Guo,Shiwei Feng,Dong Li,Zheng Liu,Zhixuan Fang,Zeng Huang,Si Wang,Na Xie,Hui Zhu
DOI:10.1088/1361-6641/ac3373

Research on the Wake-up Effect of Ferroelectric HfO2-ZrO2 Thin Films

Abstract The appearance of ferroelectric (FE) and anti-ferroelectric (AFE) properties in HfO2-based thin films is highly intriguing in terms of both the scientific context and practical application in various electronic and energy-related devices. Interestingly, these materials showed a “wake-up effect”, which refers to the increase in remanent polarization with increasing electric field cycling number before the occurrence of the fatigue effect. The appearance of ferroelectric (FE) and anti-ferroelectric (AFE) properties in HfO2-based thin films is highly intriguing in terms of both the scientific context and practical application in various electronic and energy. In this paper, we have conducted an in-depth study on the relationship between the Wake-up effect in HfO2-based films and oxygen vacancies.

期刊: Journal of Physics: Conference Series  2021
作者: Zhixuan Fang,Zeng Huang,Na Xie,Si Wang,Jie Liu,Hui Zhu,Rui Li
DOI:10.1088/1742-6596/1907/1/012020

Effect of Uniaxial Tensile Strains at Different Orientations on the Characteristics of AlGaN/GaN High-Electron-Mobility Transistors

期刊: IEEE Transactions on Electron Devices  2020
作者: Yamin Zhang,Chunsheng Guo,Shiwei Feng,Jie Liu,Rui Li,Lei Jin,Kai Liu,Daping Chu,Si Wang,Hui Zhu,Chen Wang
DOI:10.1109/ted.2019.2961956

Effect of post-deposition annealing pressure on bipolar resistive switching in RF sputtered BiFeO<inf>3</inf>/Nb:SrTiO<inf>3</inf> heterostructure

期刊: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)  2018
作者: Yamin Zhang,Chunsheng Guo,Shiwei Feng,Si Wang,Chen Wang,Lei Jin,Xiao Meng,Hui Zhu,Ying Yang
DOI:10.1109/icsict.2018.8564947