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胡朝旭
  邮箱   441500660@qq.com 
论文

Low-cost reconfigurable temperature sensor array on field programmable gate array

期刊: 2021 4th International Conference on Electron Device and Mechanical Engineering (ICEDME)  2021
作者: Chaoxu Hu,Shiwei Feng,Sheng Wang
DOI:10.1109/icedme52809.2021.00012

Build-in compact and efficient temperature sensor array on field programmable gate array

期刊: Microelectronics Journal  2021
作者: Shijie Pan,Chaoxu Hu,Yuxuan Xiao,Shiwei Feng,Sheng Wang
DOI:10.1016/j.mejo.2021.105018

Analysis of the Effects of High-Energy Electron Irradiation of GaN High-Electron-Mobility Transistors Using the Voltage-Transient Method

期刊: IEEE Transactions on Electron Devices  2021
作者: Gang Lin,Guojian Shao,Chaoxu Hu,Xiaozhuang Lu,Xiang Zheng,Xuan Li,Shiwei Feng,Shijie Pan
DOI:10.1109/ted.2021.3089449

A new method for detecting heteromorphic workpiece brazing layer quality based on thermal probe

期刊: Review of Scientific Instruments  2021
作者: Shijie Pan,Sheng Wang,Kun Bai,Xin He,Yamin Zhang,Shiwei Feng,Chaoxu Hu
DOI:10.1063/5.0054559

Non-destructive testing of heteromorphic workpiece brazing layer quality based on heat conduction

期刊: 2021 4th International Conference on Electron Device and Mechanical Engineering (ICEDME)  2021
作者: Sheng Wang,Kun Bai,Xin He,Shiwei Feng,Chaoxu Hu
DOI:10.1109/icedme52809.2021.00014

Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method

期刊: Semiconductor Science and Technology  2021
作者: Yamin Zhang,Lixing Zhou,Kun Bai,Xin He,Chaoxu Hu,Xiaozhuang Lu,Xiang Zheng,Xuan Li,Shiwei Feng,Shijie Pan
DOI:10.1088/1361-6641/ac1563

Evidence of GaN HEMT Schottky Gate Degradation After Gamma Irradiation

期刊: IEEE Transactions on Electron Devices  2019
作者: Yamin Zhang,Xiaoyang Li,Zhaoxu Hu,Shijie Pan,Ying Yang,Xuan Li,Lin Bai,Gang Lin,Chao Peng,Shiwei Feng,Xiang Zheng
DOI:10.1109/ted.2019.2928560

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