简历详情
论文
Evidence of GaN HEMT Schottky Gate Degradation After Gamma Irradiation
期刊: IEEE Transactions on Electron Devices 2019作者: Yamin Zhang,Xiaoyang Li,Zhaoxu Hu,Shijie Pan,Ying Yang,Xuan Li,Lin Bai,Gang Lin,Chao Peng,Shiwei Feng,Xiang Zheng
DOI:10.1109/ted.2019.2928560
Effect of post-deposition annealing pressure on bipolar resistive switching in RF sputtered BiFeO<inf>3</inf>/Nb:SrTiO<inf>3</inf> heterostructure
期刊: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) 2018作者: Yamin Zhang,Chunsheng Guo,Shiwei Feng,Si Wang,Chen Wang,Lei Jin,Xiao Meng,Hui Zhu,Ying Yang
DOI:10.1109/icsict.2018.8564947
Substrate thinning and external stress effect on the output characteristics of AlGaN/GaN HEMTs
期刊: 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) 2018作者: Chunsheng Guo,Yamin Zhang,Shiwei Feng,Ying Yang,Chen Wang,Hui Zhu,Xiao Meng
DOI:10.1109/edssc.2018.8487094
Fatigue behavior of resistive switching in a BiFeO3 thin film
期刊: Japanese Journal of Applied Physics 2018作者: Shiwei Feng,Xiao Meng,Zilong Bai,Anquan Jiang,Ying Yang,Hui Zhu
DOI:10.7567/jjap.57.041501
A current transient method for trap analysis in BiFeO3 thin films
期刊: Applied Physics Letters 2018作者: Shiwei Feng,Chen Wang,Lei Jin,Xiang Zheng,Zilong Bai,Anquan Jiang,Xiao Meng,Ying Yang,Hui Zhu
DOI:10.1063/1.5025424
Effect of substrate thinning on the electronic transport characteristics of AlGaN/GaN HEMTs
期刊: Solid-State Electronics 2018作者: Chunsheng Guo,Yamin Zhang,Shiwei Feng,Ying Yang,Xiang Zheng,Xiao Meng,Hui Zhu
DOI:10.1016/j.sse.2018.04.006
