Trap characteristics of hafnium oxide-based ferroelectric field-effect transistors measured by using a current transient method

The trap characteristics and polarization effect on the trapping behavior in Hf0.5Zr0.5O2 ferroelectric field-effect transistors were analyzed. The current transient that corresponds to the trapping/detrapping of charge carriers was measured and the exact time constant spectra were extracted. In accordance with the different time constants and activation energies as well as the dependence of the trapping behavior on the filling conditions, traps that originated from the oxygen vacancies in the Hf0.5Zr0.5O2 layer and from the Si/SiO2 interface trap states were identified. The detrapping peaks in time constant spectra showed a consistent changing trend with the variation of remanent polarization, confirming that the positive polarization enhanced the trapping of charge carriers injected from channel side to the ferroelectric layer.

A thermal boundary resistance measurement method based on a designed chip with the heat source separated from the temperature sensor

Measurements of thermal boundary resistance (TBR) are of great significance in the fields of electronic packaging and thermal management. In this study, a measurement method based on a designed 1 × 1 mm2 chip with a heat source separated from a temperature sensor was developed. The chip consists of a temperature sensor with nine Schottky diodes connected in series and a heat source composed of metal wires, which are separated by SiO2 to realize electrical isolation. With this chip, the TBR of samples can be extracted from transient temperature response curves of GaN on a Si wafer using the structure function and transient dual interface test methods. In particular, the surface of samples was etched with uniform arrays to increase the measurement accuracy. The TBR measurements of four samples etched on the same wafer under different conditions were 1.62 ± 0.22 × 10−8, 1.6 ± 0.38 × 10−8, 1.49 ± 0.18 × 10−8, and 1.6 ± 0.35 × 10−8 m2K/W, indicating consistency of the results. This chip effectively expands the application of the structure function method to TBR measurements, which can be helpful for further research on interfacial heat transport.

Measurement Deviation of the Virtual Junction Temperature by the Saturation Voltage Drop Method for Insulated-Gate Bipolar Transistors

Analysis of the Degradation of Depletion-Mode GaN High-Electron-Mobility Transistors under Reverse Pulse Electrical Stress Using the Voltage-Transient Method

Measuring Double-Sided Thermal Resistance of Press-Pack IGBT Modules Based on Ratio of Double-Sided Heat Dissipation

A numerical calibration of structure-function transient thermal measurement based on Cauer RC network

Study of the temperature distribution in insulated gate bipolar transistor module under different test conditions

Research on temperatures located within facet coating layers along z-axis of semiconductor lasers

Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy

Abstract This paper presents a detailed investigation of trapping effect in AlGaN/GaN high-electron-mobility transistors based on the pulsed current–voltage characterization, drain voltage transient (DVT) measurement, and capacitance deep-level transient spectroscopy (C-DLTS). By monitoring the DVTs at various filling voltages and temperatures, the properties of three electron traps were obtained with the DVT measurements. Specifically, the energy levels of the former two traps were determined to be 0.28 and 0.48 eV, which was confirmed by the C-DLTS measurement performed on the same device. In addition, a third temperature-independent trap located in the GaN buffer was observed only with the DVT measurement, indicating the advantage of transient curves measurement in characterizing the traps insensitive to temperature. The combined measurements demonstrate the correlation of different techniques, which allows identifying the same trap levels to investigate the physical origin of traps.

Identification of Traps in p-GaN Gate HEMTs During OFF-State Stress by Current Transient Method

Characterization of hole traps in reverse-biased Schottky-type p-GaN gate HEMTs by current-transient method

In this study, the current-transient method has been conducted to investigate the trap states in p-GaN gate high-electron-mobility transistors (HEMTs) under reverse gate stress. An irregular threshold voltage shift under reverse gate bias has been observed through the pulsed transfer measurements with different delay times. It suggests that both the hole insufficiency and hole trapping are generated during the reverse gate pulse bias. With proper selection of the delay time based on the pulsed characterizations, the hole detrapping can be effectively evaluated after the hole recovery is completed. In addition, by subtracting the trapping behavior caused by the measurement condition, the actual detrapping transient under reverse gate filling voltages can be obtained with the current-transient method. Three traps have been observed with the energy levels of 0.484, 0.390, and 0.235 eV. The identification of hole traps may provide a basis on the understanding of threshold voltage instability and further improvement of the reliability of p-GaN gate HEMTs.

Nondestructive Measurement for Front Facet Temperature of Semiconductor Lasers

Abstract A convenient, simple method is proposed to measure the front facet temperature, which is the highest temperature in the semiconductor laser diode (LD), of a GaAs-based laser by employing thermoreflectance technique. Using an optical system featured in fiber connection, we measured the facet reflectivity of the 808-nm AlGaInAs/AlGaAs LD, which gives information about the temperature of the output facet. The fiber system operates at the wavelength of 1550 nm which avoids the absorption of the probe beam by the tested LD and consists of a fiber-coupled 1550 nm laser illuminant and photodiode. All optical elements in the system are connected by the fibers. The current signal collected from the photodiode is related to the facet reflectivity and represents facet temperature. We compared the facet temperatures determined by thermoreflectance technique with the cavity temperature obtained by forward-voltage method and found that the former is as much as three times as the latter.

Build-in compact and efficient temperature sensor array on field programmable gate array

Analysis of the Effects of High-Energy Electron Irradiation of GaN High-Electron-Mobility Transistors Using the Voltage-Transient Method

Effects of temperature and bias voltage on electron transport properties in GaN highelectron-mobility transistors

Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method

Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors via Amplitude Analysis Based on the Voltage-Transient Method

A new method for detecting heteromorphic workpiece brazing layer quality based on thermal probe

Effect of high- and low-side blocking on short-circuit characteristics of SiC MOSFET

Characterization of thermal-resistance in Ga2O3 Schottky barrier diodes with temperature-sensitive electrical parameters

A Drain–Source Connection Technique: Thermal Resistance Measurement Method for GaN HEMTs Using TSEP at High Voltage

A voltage-transient method for characterizing traps in GaN HEMTs

Evidence of GaN HEMT Schottky Gate Degradation After Gamma Irradiation

Temperature distribution measurement for chips based on FPGA