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何鑫
  邮箱   hex093@emails.bjut.edu.cn 
论文

Effect of interface morphology on thermal contact resistance in thermal management of electronic devices

The interfacial thermal resistance between two solid materials is usually obvious in thermal management technology, but there is still no way to eliminate it nor uniform measurement standard. When taking thermal measurements because the surface roughness of instrument probe and device package directly affects the interface morphology, the change of total thermal resistance caused by the thermal contact resistance (TCR) fluctuations disturbs the accuracy of internal thermal analysis of device. We prepared samples with different surface roughness and performed thermal measurements on them, compared with test under vacuum environment and the condition filled with thermal interface materials, respectively. We found the heat-transfer mechanism of interface. More importantly, it is shown that in the interval of surface roughness [Formula: see text], the TCR shows good consistency when filled with thermal interface materials. This result will help to improve the convenience of measurement for the accuracy of thermal measurement technology.

期刊: International Journal of Modern Physics B  2022
作者: Xuan Li,Kun Bai,Xin He,Ya-Min Zhang,Shi-Wei Feng,Yu-Zheng Chen
DOI:10.1142/s0217979222500928

Characterization of thermal-resistance in Ga2O3 Schottky barrier diodes with temperature-sensitive electrical parameters

期刊: Semiconductor Science and Technology  2021
作者: Shijie Pan,Kun Bai,Xin He,Yuangang Wang,Yuanjie Lv,Zhihong Feng,Shiwei Feng,Xuan Li
DOI:10.1088/1361-6641/ac1d23

Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors via Amplitude Analysis Based on the Voltage-Transient Method

期刊: IEEE Transactions on Electron Devices  2021
作者: Lixing Zhou,Yamin Zhang,Kun Bai,Xin He,Xiaozhuang Lu,Xiang Zheng,Xuan Li,Shiwei Feng,Shijie Pan
DOI:10.1109/ted.2021.3108755

A new method for detecting heteromorphic workpiece brazing layer quality based on thermal probe

期刊: Review of Scientific Instruments  2021
作者: Shijie Pan,Sheng Wang,Kun Bai,Xin He,Yamin Zhang,Shiwei Feng,Chaoxu Hu
DOI:10.1063/5.0054559

Effect of high- and low-side blocking on short-circuit characteristics of SiC MOSFET

期刊: Microelectronics Reliability  2021
作者: Xuan Li,Shijie Pan,Xin He,Xiang Zheng,Shiwei Feng,Kun Bai
DOI:10.1016/j.microrel.2021.114227

Effects of temperature and bias voltage on electron transport properties in GaN highelectron-mobility transistors

期刊: IEEE Transactions on Device and Materials Reliability  2021
作者: Kun Bai,Xuan Li,Xin He,Xiang Zheng,Shiwei Feng,Shijie Pan
DOI:10.1109/tdmr.2021.3109088

Non-destructive testing of heteromorphic workpiece brazing layer quality based on heat conduction

期刊: 2021 4th International Conference on Electron Device and Mechanical Engineering (ICEDME)  2021
作者: Sheng Wang,Kun Bai,Xin He,Shiwei Feng,Chaoxu Hu
DOI:10.1109/icedme52809.2021.00014

Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method

期刊: Semiconductor Science and Technology  2021
作者: Yamin Zhang,Lixing Zhou,Kun Bai,Xin He,Chaoxu Hu,Xiaozhuang Lu,Xiang Zheng,Xuan Li,Shiwei Feng,Shijie Pan
DOI:10.1088/1361-6641/ac1563

Effect of Surface Roughness on Thermal Contact Resistance of Fixed Interface in Thermal Measurement of Electron Device

期刊: 2020 3rd International Conference on Electron Device and Mechanical Engineering (ICEDME)  2020
作者: Xuan Li,Kun Bai,Xin He,Yamin Zhang,Shiwei Feng,Yuzheng Chen
DOI:10.1109/icedme50972.2020.00017

A Drain–Source Connection Technique: Thermal Resistance Measurement Method for GaN HEMTs Using TSEP at High Voltage

期刊: IEEE Transactions on Electron Devices  2020
作者: Lin Bai,Gang Lin,Shijie Pan,Xin He,Xiang Zheng,Yuxuan Xiao,Kun Bai,Yamin Zhang,Chang Liu,Shiwei Feng,Xuan Li
DOI:10.1109/ted.2020.3033259

A New Method for Measuring Thermal Characteristics of Multistage Depressed Collectors

期刊: IEEE Transactions on Electron Devices  2019
作者: Manpo Yang,Wenjuan Yu,Shiwei Feng,Yamin Zhang,Xin He
DOI:10.1109/ted.2019.2947423

A New Differential Amplitude Spectrum for Analyzing the Trapping Effect in GaN HEMTs Based on the Drain Current Transient

期刊: IEEE Transactions on Electron Devices  2017
作者: Yu Wang,Xin He,Yamin Zhang,Shiwei Feng,Xiang Zheng
DOI:10.1109/ted.2017.2654481

Optimized thermal sensor allocation for field-programmable gate array temperature measurements based on self-heating test

期刊: Microelectronics Journal  2017
作者: Xin He,Chao Wang,Yamin Zhang,Shiwei Feng,Jingwei Li
DOI:10.1016/j.mejo.2016.11.013

Rapid test method for thermal characteristics of semiconductor devices

期刊: 2017 33rd Thermal Measurement, Modeling & Management Symposium (SEMI-THERM)  2017
作者: Yamin Zhang,Xin He,Jingwei Li,Xiang Zheng,Dong Shi,Shiwei Feng
DOI:10.1109/semi-therm.2017.7896932

Analysis of the hybrid trapping effect in GaN HEMTS based on the current transient spectroscopy

期刊: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)  2016
作者: Yu Wang,Xin He,Yamin Zhang,Shiwei Feng,Xiang Zheng
DOI:10.1109/icsict.2016.7998916

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