Effects of Static and Repetitive Uniaxial Bending Strains on the Electrical Properties and Trap Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors

A numerical calibration of structure-function transient thermal measurement based on Cauer RC network

A thermal boundary resistance measurement method based on a designed chip with the heat source separated from the temperature sensor

Measurements of thermal boundary resistance (TBR) are of great significance in the fields of electronic packaging and thermal management. In this study, a measurement method based on a designed 1 × 1 mm2 chip with a heat source separated from a temperature sensor was developed. The chip consists of a temperature sensor with nine Schottky diodes connected in series and a heat source composed of metal wires, which are separated by SiO2 to realize electrical isolation. With this chip, the TBR of samples can be extracted from transient temperature response curves of GaN on a Si wafer using the structure function and transient dual interface test methods. In particular, the surface of samples was etched with uniform arrays to increase the measurement accuracy. The TBR measurements of four samples etched on the same wafer under different conditions were 1.62 ± 0.22 × 10−8, 1.6 ± 0.38 × 10−8, 1.49 ± 0.18 × 10−8, and 1.6 ± 0.35 × 10−8 m2K/W, indicating consistency of the results. This chip effectively expands the application of the structure function method to TBR measurements, which can be helpful for further research on interfacial heat transport.

Research on Transient Temperature Rise Measurement Method for Semiconductor Devices Based on Photothermal Reflection

Trap Characterization of Trench-Gate SiC MOSFETs based on Transient Drain Current

Identification of Traps in p-GaN Gate HEMTs During OFF-State Stress by Current Transient Method

Effect of interface morphology on thermal contact resistance in thermal management of electronic devices

The interfacial thermal resistance between two solid materials is usually obvious in thermal management technology, but there is still no way to eliminate it nor uniform measurement standard. When taking thermal measurements because the surface roughness of instrument probe and device package directly affects the interface morphology, the change of total thermal resistance caused by the thermal contact resistance (TCR) fluctuations disturbs the accuracy of internal thermal analysis of device. We prepared samples with different surface roughness and performed thermal measurements on them, compared with test under vacuum environment and the condition filled with thermal interface materials, respectively. We found the heat-transfer mechanism of interface. More importantly, it is shown that in the interval of surface roughness [Formula: see text], the TCR shows good consistency when filled with thermal interface materials. This result will help to improve the convenience of measurement for the accuracy of thermal measurement technology.

Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors

Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy

Abstract This paper presents a detailed investigation of trapping effect in AlGaN/GaN high-electron-mobility transistors based on the pulsed current–voltage characterization, drain voltage transient (DVT) measurement, and capacitance deep-level transient spectroscopy (C-DLTS). By monitoring the DVTs at various filling voltages and temperatures, the properties of three electron traps were obtained with the DVT measurements. Specifically, the energy levels of the former two traps were determined to be 0.28 and 0.48 eV, which was confirmed by the C-DLTS measurement performed on the same device. In addition, a third temperature-independent trap located in the GaN buffer was observed only with the DVT measurement, indicating the advantage of transient curves measurement in characterizing the traps insensitive to temperature. The combined measurements demonstrate the correlation of different techniques, which allows identifying the same trap levels to investigate the physical origin of traps.

Research on temperatures located within facet coating layers along z-axis of semiconductor lasers

Characterization of hole traps in reverse-biased Schottky-type p-GaN gate HEMTs by current-transient method

In this study, the current-transient method has been conducted to investigate the trap states in p-GaN gate high-electron-mobility transistors (HEMTs) under reverse gate stress. An irregular threshold voltage shift under reverse gate bias has been observed through the pulsed transfer measurements with different delay times. It suggests that both the hole insufficiency and hole trapping are generated during the reverse gate pulse bias. With proper selection of the delay time based on the pulsed characterizations, the hole detrapping can be effectively evaluated after the hole recovery is completed. In addition, by subtracting the trapping behavior caused by the measurement condition, the actual detrapping transient under reverse gate filling voltages can be obtained with the current-transient method. Three traps have been observed with the energy levels of 0.484, 0.390, and 0.235 eV. The identification of hole traps may provide a basis on the understanding of threshold voltage instability and further improvement of the reliability of p-GaN gate HEMTs.

Experimental investigation on dipole and band offset affected by charge neutrality level modulation

A new method for detecting heteromorphic workpiece brazing layer quality based on thermal probe

Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors via Amplitude Analysis Based on the Voltage-Transient Method

Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method

Study of traps in low-temperature polysilicon thin film transistors using a current transient method

Abstract The trap characteristics of low-temperature polysilicon thin film transistors (TFTs) are studied using a current transient method that is based on the trapping and detrapping of charge carriers from the trap sites in the device. Analysis of the measured current transient curve allowed three types of detrapping behavior to be identified, each of which displayed a different time constant, activation energy, and spatial position. This current transient method can be integrated into the negative bias temperature instability stress test used for the reliability study. The peak amplitudes of the traps increase because of the stress applied in the test, thus demonstrating that the degradation mechanism of the TFTs is closely related to changes in the traps in these devices.

Nondestructive Measurement for Front Facet Temperature of Semiconductor Lasers

Abstract A convenient, simple method is proposed to measure the front facet temperature, which is the highest temperature in the semiconductor laser diode (LD), of a GaAs-based laser by employing thermoreflectance technique. Using an optical system featured in fiber connection, we measured the facet reflectivity of the 808-nm AlGaInAs/AlGaAs LD, which gives information about the temperature of the output facet. The fiber system operates at the wavelength of 1550 nm which avoids the absorption of the probe beam by the tested LD and consists of a fiber-coupled 1550 nm laser illuminant and photodiode. All optical elements in the system are connected by the fibers. The current signal collected from the photodiode is related to the facet reflectivity and represents facet temperature. We compared the facet temperatures determined by thermoreflectance technique with the cavity temperature obtained by forward-voltage method and found that the former is as much as three times as the latter.

A Drain–Source Connection Technique: Thermal Resistance Measurement Method for GaN HEMTs Using TSEP at High Voltage

Effect of Uniaxial Tensile Strains at Different Orientations on the Characteristics of AlGaN/GaN High-Electron-Mobility Transistors

Effect of Surface Roughness on Thermal Contact Resistance of Fixed Interface in Thermal Measurement of Electron Device

Evidence of GaN HEMT Schottky Gate Degradation After Gamma Irradiation

Junction Temperature Measurement Method for SiC Bipolar Junction Transistor Using Base-Collector Voltage Drop at Low Current

A voltage-transient method for characterizing traps in GaN HEMTs

Identifying the Traps in the Channel Region in GaN-based HEMTs Using a Nonmonotone Drain Current Transient

A New Method for Measuring Thermal Characteristics of Multistage Depressed Collectors

Temperature distribution measurement based on field-programmable gate array embedded ring oscillators

Evaluation of the Schottky Contact Degradation on the Temperature Transient Measurements in GaN HEMTs

Effect of two-dimensional electron gas on horizontal heat transfer in AlGaN/AlN/GaN heterojunction transistors

Junction Temperature Measurement Method for Power mosfets Using Turn-On Delay of Impulse Signal

Junction Temperature measurement of SiC BJT via the voltage drop of V<inf>BC</inf>

Effect of post-deposition annealing pressure on bipolar resistive switching in RF sputtered BiFeO<inf>3</inf>/Nb:SrTiO<inf>3</inf> heterostructure

Temperature distribution measurement for chips based on FPGA

Substrate thinning and external stress effect on the output characteristics of AlGaN/GaN HEMTs

Bipolar Resistive Switching Effect in BiFeO3/Nb:SrTiO3 Heterostructure by RF Sputtering at Room Temperature

A current-transient method for identifying the spatial positions of traps in GaN-based HEMTs

Effect of substrate thinning on the electronic transport characteristics of AlGaN/GaN HEMTs

Optimized thermal sensor allocation for field-programmable gate array temperature measurements based on self-heating test

A New Differential Amplitude Spectrum for Analyzing the Trapping Effect in GaN HEMTs Based on the Drain Current Transient

Study of Heat Transport Behavior in GaN-Based Transistors by Schottky Characteristics Method

Rapid test method for thermal characteristics of semiconductor devices

Identifying the spatial position and properties of traps in GaN HEMTs using current transient spectroscopy

Analysis of the hybrid trapping effect in GaN HEMTS based on the current transient spectroscopy

B13-P-01Temperature Characterization of Self-heating in GaN-based Transistors by Cathodeluminescence Spectroscopy

Variation of Dominant Degradation Mechanism in AlGaN Barrier Layer With Different Voltage Stress on the Gate of AlGaN/GaN High Electron Mobility Transistors

Mechanism of the self-changing parameters and characteristics in AlGaN/GaN high-electron mobility transistors after a step voltage stress

Thermal investigation of LED array with multiple packages based on the superposition method

Measuring temperature in GaN-based high electron mobility transistors by cathodoluminescence spectroscopy

Effect of Self-Heating on the Drain Current Transient Response in AlGaN/GaN HEMTs

Determining Drain Current Characteristics and Channel Temperature Rise in GaN HEMTs

Thermal analysis of multiple light sources based on the superposition method

Evaluation of the drain—source voltage effect on AlGaAs/InGaAs PHEMTs thermal resistance by the structure function method

Self-heating and traps effects on the drain transient response of AlGaN/GaN HEMTs

The channel temperature dependence of drain transient response in AlGaN/GaN HEMTs

Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs

Assessment of pulse conditions effects on reliability in GaN-based high electron mobility transistors by transient temperature measurements