Analysis of the Degradation of Depletion-Mode GaN High-Electron-Mobility Transistors under Reverse Pulse Electrical Stress Using the Voltage-Transient Method

A numerical calibration of structure-function transient thermal measurement based on Cauer RC network

A thermal boundary resistance measurement method based on a designed chip with the heat source separated from the temperature sensor

Measurements of thermal boundary resistance (TBR) are of great significance in the fields of electronic packaging and thermal management. In this study, a measurement method based on a designed 1 × 1 mm2 chip with a heat source separated from a temperature sensor was developed. The chip consists of a temperature sensor with nine Schottky diodes connected in series and a heat source composed of metal wires, which are separated by SiO2 to realize electrical isolation. With this chip, the TBR of samples can be extracted from transient temperature response curves of GaN on a Si wafer using the structure function and transient dual interface test methods. In particular, the surface of samples was etched with uniform arrays to increase the measurement accuracy. The TBR measurements of four samples etched on the same wafer under different conditions were 1.62 ± 0.22 × 10−8, 1.6 ± 0.38 × 10−8, 1.49 ± 0.18 × 10−8, and 1.6 ± 0.35 × 10−8 m2K/W, indicating consistency of the results. This chip effectively expands the application of the structure function method to TBR measurements, which can be helpful for further research on interfacial heat transport.

Research on transient thermal behavior of semiconductor lasers under pulse current excitation by thermoreflection technique

Implementation of Fast Measurement System of Semiconductor Device Parameter Temperature Coefficient Based on FPGA

Abstract In this paper, a fast temperature coefficient measurement system based on FPGA is presented to rapidly measure the temperature coefficient of semiconductor device parameters. The design methods of hardware circuit, software system and FPGA program are put forward here. The system uses the heating platform to linearly raise the temperature of the device, and collects the voltage and temperature information in real time. Through the integration and processing of a large number of data, the temperature coefficient of DUT can be obtained rapidly and accurately. Based on this system, the silicon-based Schottky barrier diode (Si SBD) is studied, and the diode temperature coefficient is obtained. Compared with the steady-state method to verify the rapidity, accuracy and efficiency of the system. It can be used in the field of electrical and thermal measurement of semiconductor devices.

Research on temperatures located within facet coating layers along z-axis of semiconductor lasers

Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy

Abstract This paper presents a detailed investigation of trapping effect in AlGaN/GaN high-electron-mobility transistors based on the pulsed current–voltage characterization, drain voltage transient (DVT) measurement, and capacitance deep-level transient spectroscopy (C-DLTS). By monitoring the DVTs at various filling voltages and temperatures, the properties of three electron traps were obtained with the DVT measurements. Specifically, the energy levels of the former two traps were determined to be 0.28 and 0.48 eV, which was confirmed by the C-DLTS measurement performed on the same device. In addition, a third temperature-independent trap located in the GaN buffer was observed only with the DVT measurement, indicating the advantage of transient curves measurement in characterizing the traps insensitive to temperature. The combined measurements demonstrate the correlation of different techniques, which allows identifying the same trap levels to investigate the physical origin of traps.

Effect of interface morphology on thermal contact resistance in thermal management of electronic devices

The interfacial thermal resistance between two solid materials is usually obvious in thermal management technology, but there is still no way to eliminate it nor uniform measurement standard. When taking thermal measurements because the surface roughness of instrument probe and device package directly affects the interface morphology, the change of total thermal resistance caused by the thermal contact resistance (TCR) fluctuations disturbs the accuracy of internal thermal analysis of device. We prepared samples with different surface roughness and performed thermal measurements on them, compared with test under vacuum environment and the condition filled with thermal interface materials, respectively. We found the heat-transfer mechanism of interface. More importantly, it is shown that in the interval of surface roughness [Formula: see text], the TCR shows good consistency when filled with thermal interface materials. This result will help to improve the convenience of measurement for the accuracy of thermal measurement technology.

Identification of Traps in p-GaN Gate HEMTs During OFF-State Stress by Current Transient Method

Characterization of hole traps in reverse-biased Schottky-type p-GaN gate HEMTs by current-transient method

In this study, the current-transient method has been conducted to investigate the trap states in p-GaN gate high-electron-mobility transistors (HEMTs) under reverse gate stress. An irregular threshold voltage shift under reverse gate bias has been observed through the pulsed transfer measurements with different delay times. It suggests that both the hole insufficiency and hole trapping are generated during the reverse gate pulse bias. With proper selection of the delay time based on the pulsed characterizations, the hole detrapping can be effectively evaluated after the hole recovery is completed. In addition, by subtracting the trapping behavior caused by the measurement condition, the actual detrapping transient under reverse gate filling voltages can be obtained with the current-transient method. Three traps have been observed with the energy levels of 0.484, 0.390, and 0.235 eV. The identification of hole traps may provide a basis on the understanding of threshold voltage instability and further improvement of the reliability of p-GaN gate HEMTs.

Effect of high- and low-side blocking on short-circuit characteristics of SiC MOSFET

Nondestructive Measurement for Front Facet Temperature of Semiconductor Lasers

Abstract A convenient, simple method is proposed to measure the front facet temperature, which is the highest temperature in the semiconductor laser diode (LD), of a GaAs-based laser by employing thermoreflectance technique. Using an optical system featured in fiber connection, we measured the facet reflectivity of the 808-nm AlGaInAs/AlGaAs LD, which gives information about the temperature of the output facet. The fiber system operates at the wavelength of 1550 nm which avoids the absorption of the probe beam by the tested LD and consists of a fiber-coupled 1550 nm laser illuminant and photodiode. All optical elements in the system are connected by the fibers. The current signal collected from the photodiode is related to the facet reflectivity and represents facet temperature. We compared the facet temperatures determined by thermoreflectance technique with the cavity temperature obtained by forward-voltage method and found that the former is as much as three times as the latter.

Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method

Effects of temperature and bias voltage on electron transport properties in GaN highelectron-mobility transistors

Non-destructive testing of heteromorphic workpiece brazing layer quality based on heat conduction

A new method for detecting heteromorphic workpiece brazing layer quality based on thermal probe

Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors via Amplitude Analysis Based on the Voltage-Transient Method

Characterization of thermal-resistance in Ga2O3 Schottky barrier diodes with temperature-sensitive electrical parameters

The study of temperature-dependent degradation of optical output on 808 nm GaAs-Based High-Power Laser Diode Bars

A Drain–Source Connection Technique: Thermal Resistance Measurement Method for GaN HEMTs Using TSEP at High Voltage

Effect of Surface Roughness on Thermal Contact Resistance of Fixed Interface in Thermal Measurement of Electron Device

Real-time measurement and control of junction temperature of VDMOS in power cycle test

Monitoring of defects creation sequence in 808 nm laser diode by reflectance analysis

Identifying the Traps in the Channel Region in GaN-based HEMTs Using a Nonmonotone Drain Current Transient

Junction Temperature Measurement Method for SiC Bipolar Junction Transistor Using Base-Collector Voltage Drop at Low Current

Junction Temperature measurement of SiC BJT via the voltage drop of V<inf>BC</inf>