Novel Semiconductor Devices and Reliability Lab
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The impact of the stress induced by lateral spatial hole burning on the degradation of broad-area AlGaAs/GaAs laser diodes
2012
期刊
Journal of Applied Physics
- 卷 112
- 期 11
- 页码 113104
- AIP Publishing
- ISSN: 0021-8979
- DOI: 10.1063/1.4768194
