Novel Semiconductor Devices and Reliability Lab
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Working Thermal Stresses in AlGaAs/GaAs High-Power Laser Diode Bars Using Infrared Thermography
2014
期刊
IEEE Transactions on Device and Materials Reliability
- 卷 14
- 期 1
- 页码 413-417
- Institute of Electrical and Electronics Engineers (IEEE)
- ISSN: 1530-4388
- DOI: 10.1109/tdmr.2013.2279253
