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Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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Degradation Analysis of Facet Coating in GaAs-Based High-Power Laser Diodes

2015
期刊 IEEE Transactions on Device and Materials Reliability
  • 卷 15
  • 期 3
  • 页码 359-362
  • Institute of Electrical and Electronics Engineers (IEEE)
  • ISSN: 1530-4388
  • DOI: 10.1109/tdmr.2015.2446993