Identifying the spatial position and properties of traps in GaN HEMTs using current transient spectroscopy - Novel Semiconductor Devices and Reliability Lab | LabXing

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Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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Identifying the spatial position and properties of traps in GaN HEMTs using current transient spectroscopy

2016

期刊 Microelectronics Reliability

作者 Xiang Zheng · Shiwei Feng · Yamin Zhang · Junwei Yang

卷 63
页码 46-51
Elsevier BV
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2016.05.001