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Study of Heat Transport Behavior in GaN-Based Transistors by Schottky Characteristics Method
2017
期刊
IEEE Transactions on Electron Devices
- 卷 64
- 期 5
- 页码 2166-2171
- Institute of Electrical and Electronics Engineers (IEEE)
- ISSN: 0018-9383
- DOI: 10.1109/ted.2017.2684180
