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Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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Effect of Self-Heating on the Drain Current Transient Response in AlGaN/GaN HEMTs

2014
期刊 IEEE Electron Device Letters
  • 卷 35
  • 期 3
  • 页码 345-347
  • Institute of Electrical and Electronics Engineers (IEEE)
  • ISSN: 0741-3106
  • DOI: 10.1109/led.2014.2300856