Novel Semiconductor Devices and Reliability Lab
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Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors via Amplitude Analysis Based on the Voltage-Transient Method
2021
期刊
IEEE Transactions on Electron Devices
作者
Shijie Pan
· Shiwei Feng
· Xuan Li
· Xiang Zheng
· Xiaozhuang Lu
· Xin He
· Kun Bai
· Yamin Zhang
· Lixing Zhou
- 页码 1-6
- Institute of Electrical and Electronics Engineers (IEEE)
- ISSN: 0018-9383
- DOI: 10.1109/ted.2021.3108755
