Novel Semiconductor Devices and Reliability Lab
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Effects of temperature and bias voltage on electron transport properties in GaN highelectron-mobility transistors
2021
期刊
IEEE Transactions on Device and Materials Reliability
- 页码 1-1
- Institute of Electrical and Electronics Engineers (IEEE)
- ISSN: 1530-4388
- DOI: 10.1109/tdmr.2021.3109088
