Novel Semiconductor Devices and Reliability Lab
分享到
Analysis of the Effects of High-Energy Electron Irradiation of GaN High-Electron-Mobility Transistors Using the Voltage-Transient Method
2021
期刊
IEEE Transactions on Electron Devices
作者
Shijie Pan
· Shiwei Feng
· Xuan Li
· Xiang Zheng
· Xiaozhuang Lu
· Chaoxu Hu
· Guojian Shao
· Gang Lin
- 卷 68
- 期 8
- 页码 3968-3973
- Institute of Electrical and Electronics Engineers (IEEE)
- ISSN: 0018-9383
- DOI: 10.1109/ted.2021.3089449
