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简介 半导体存储器件
王晓磊
徐昊
柴俊帅
贾新培
胡涛
孙晓清
田凤彬
段佳辉
恭喜贾新培博士的文章“Depolarization Field in FeFET Considering Minor Loop Operation and Charge Trapping”发表在IEEE TED上
恭喜赵淑景硕士的文章“Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO2/Si (MFIS) Gate Structure”发表在IEEE TED上
恭喜田凤彬博士的文章“Impact of Interlayer and Ferroelectric Materials on Charge Trapping during Endurance Fatigue of FeFET with TiN/HfxZr1-xO2/interlayer/Si (MFIS) Gate Structure”发表在IEEE TED杂志上
FeFET是非常有前景的存储器方案之一,尤其HfZrO铁电薄膜的发现,更使得Si衬底上HfZrO FeFET器件展现出巨大的前景。然而,疲劳特性(endurance)却是当前巨大挑战之一。本课题组专注研究HfZrO薄膜Si FeFET的疲劳特性,涵盖器件、材料、物理研究,具体包含以下几方面:
(1)栅结构注入/反注入效应(trapping/de-trapping)
(2)栅缺陷钝化
(3)HfZrO铁电薄膜调制