恭喜田凤彬博士的文章“Impact of Interlayer and Ferroelectric Materials on Charge Trapping during Endurance Fatigue of FeFET with TiN/HfxZr1-xO2/interlayer/Si (MFIS) Gate Structure”发表在IEEE TED杂志上
铁电器件课题组（王晓磊）
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田凤彬博士的的IEEE TED文章发表
创建: Nov 18, 2021 | 08:29
