Physical Insights on Quantum Confinement and Carrier Mobility in Si, Si₀ٜ₄₅Ge₀ٜ₅₅, Ge Gate-All-Around NSFET for 5nm Technology Node

Spin-polarized charge transport in HgTe/CdTe quantum well topological insulator under a ferromagnetic metal strip

Comparative Investigation of Flat-Band Voltage Modulation by Nitrogen Plasma Treatment for Advanced HKMG Technology

Novel GAA Si Nanowire p-MOSFETs With Excellent Short-Channel Effect Immunity via an Advanced Forming Process

Performance Enhancement for Charge Trapping Memory by Using Al 2 O 3 /HfO 2 /Al 2 O 3 Tri-Layer High-κ Dielectrics and High Work Function Metal Gate

Simulation for the feasibility of high-mobility channel in 3D nand memory

Investigation for the Feasibility of High-Mobility Channel in 3D NAND Memory

Spin-polarized charge trapping cell based on a topological insulator quantum dot

We demonstrate theoretically that a topological insulator quantum dot can be formed via double topological insulator constrictions (TICs), and can be used as a charge and/or spin carrier trap memory element.

Tuning of few-electron states and optical absorption anisotropy in GaAs quantum rings

The electronic and optical properties of a GaAs quantum ring (QR) with few electrons in the presence of the Rashba spin–orbit interaction (RSOI) and the Dresselhaus spin–orbit interaction (DSOI) have been investigated theoretically.

Rashba spin-orbit coupling in graphene monolayer coated by periodic magnetic stripes

FOI FinFET with ultra-low parasitic resistance enabled by fully metallic source and drain formation on isolated bulk-fin

Valley-Dependent Brewster Angles and Goos-Hänchen Effect in Strained Graphene

Spin and momentum filtering of electrons on the surface of a topological insulator

Electron tunneling through double magnetic barriers on the surface of a topological insulator

Quantum tunneling through graphene nanorings

The Hartman effect in graphene