Depolarization Field in FeFET Considering Minor Loop Operation and Charge Trapping

Trap Generation in Whole Gate Stacks of FeFET With TiN/Hf$_\text{0.5}$Zr$_\text{0.5}$O$_\text{2}$/SiO$_{\textit{x}}$/Si (MFIS) Gate Structure During Endurance Fatigue

Impact of mobility degradation on endurance fatigue of FeFET with TiN/Hf_0.5Zr_0.5O₂/SiO_x/Si (MFIS) gate structure

This work investigates the impact of mobility degradation on endurance fatigue of a ferroelectric field-effect-transistor (FeFET) with the TiN/Hf0.5Zr0.5O2/SiOx/Si (MFIS) gate structure. We use the split capacitance–voltage ( C– V) method to study the carrier mobility during the program/erase cycling. We find that significant mobility degradation occurs with increasing program/erase cycle and further deteriorates endurance characteristics. Our work provides mobility degradation as another endurance fatigue factor of FeFET besides charge trapping and trap generation, which is helpful for endurance improvement.

Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO2/Si (MFIS) Gate Structure

The Effect of Interface Traps at the Si/SiO₂ Interface on the Transient Negative Capacitance of Ferroelectric FETs

Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/HfₓZr₁₋ₓO₂/Interlayer/Si (MFIS) Gate Structure

Thermodynamic driving force of transient negative capacitance of ferroelectric capacitors

Electron mobility in silicon nanowires using nonlinear surface roughness scattering model

Impact of Charges at Ferroelectric/Interlayer Interface on Depolarization Field of Ferroelectric FET With Metal/Ferroelectric/Interlayer/Si Gate-Stack

On the applicability of Gibbs free energy landscape to the definition and understanding of transient negative capacitance in a ferroelectric capacitor

Evaluation of hole mobility degradation by remote Coulomb scattering in Ge pMOSFETs

Identification of a suitable passivation route for high-k/SiGe interface based on ozone oxidation

Experimental Investigation of Remote Coulomb Scattering on Mobility Degradation of Ge pMOSFET by Various PDA Ambiences

Comprehensive investigation of the interfacial charges and dipole in GeO x /Al2O3 gate stacks of Ge MOS capacitor by postdeposition annealing

Understanding dipole formation at dielectric/dielectric hetero-interface

Identification of interfacial defects in a Ge gate stack based on ozone passivation

Hole mobility degradation by remote Coulomb scattering and charge distribution in Al2O3/GeOxgate stacks in bulk Ge pMOSFET with GeOxgrown by ozone oxidation

Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFETs

Experimental estimation of charge neutrality level of SiO2

Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeOx/Al2O3gate dielectrics

Experimental investigation on oxidation kinetics of germanium by ozone

Investigation of spatial charge distribution and electrical dipole in atomic layer deposited Al2O3on 4H-SiC

Investigation of Thermal Atomic Layer Deposited TaAlC with Low Effective Work-Function on HfO2Dielectric Using TaCl5and TEA as Precursors

Investigation on the dominant key to achieve superior Ge surface passivation by GeO based on the ozone oxidation

Reexamination of band offset transitivity employing oxide heterojunctions

A possible origin of core-level shift in SiO2/Si stacks

Band alignment of TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack

Band alignment of HfO2 on SiO2/Si structure

Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device with high-k/metal gate structure

Comprehensive understanding of the effect of electric dipole at high-k/SiO2 interface on the flatband voltage shift in metal-oxide-semiconductor device