论文
Growth of high quality AlN/sapphire templates with high growth rate using a medium-temperature layer
期刊: Superlattices and Microstructures 2019作者: Zhitao Chen,Longfei He,Kang Zhang,Chenguang He,Wei Zhao,Hualong Wu
DOI:10.1016/j.spmi.2018.12.008
Point-Defect Distribution and Transformation Near the Surfaces of AlGaN Films Grown by MOCVD
期刊: The Journal of Physical Chemistry C 2019作者: Zhitao Chen,Zheng Gong,Wei Zhao,Xiaoyan Liu,Dan Lin,Baoyi Wang,Xingzhong Cao,Ligang Song,Lei Wang,Chenguang He,Kang Zhang,Junjun Wang,Bo Li,Qiao Wang,Ningyang Liu
DOI:10.1021/acs.jpcc.8b11807
Marked enhancement in the efficiency of deep ultraviolet light-emitting diodes by using a Al x Ga1-x N carrier reservoir layer
期刊: Applied Physics Express 2019作者: Zhitao Chen,Shuti Li,Xingjun Luo,Xiaoyan Liu,Hualong Wu,Chenguang He,Kang Zhang,Wei Zhao,Longfei He
DOI:10.7567/1882-0786/ab22df
High-Quality AlN Film Grown on Sputtered AlN/Sapphire via Growth-Mode Modification
期刊: Crystal Growth & Design 2018作者: Bo Shen,Zhitao Chen,Ningyang Liu,Longfei He,Kang Zhang,Shan Zhang,Hualong Wu,Wei Zhao,Chenguang He
DOI:10.1021/acs.cgd.8b01045
Performance enhancement of AlGaN-based 365 nm ultraviolet light-emitting diodes with a band-engineering last quantum barrier
期刊: Optics Letters 2018作者: Shuti Li,Zhitao Chen,Weidong Song,Ningyang Liu,Hualong Wu,Chenguang He,Kang Zhang,Wei Zhao,Longfei He
DOI:10.1364/ol.43.000515
High-Quality GaN Epilayers Achieved by Facet-Controlled Epitaxial Lateral Overgrowth on Sputtered AlN/PSS Templates
期刊: ACS Applied Materials & Interfaces 2017作者: Zhitao Chen,Xiaoyan Liu,Shan Zhang,Ningyang Liu,Hualong Wu,Longfei He,Kang Zhang,Wei Zhao,Chenguang He
DOI:10.1021/acsami.7b14801
