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Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO2/Si (MFIS) Gate Structure
2022
期刊
IEEE Transactions on Electron Devices
作者
Shujing Zhao
· Fengbin Tian
· Hao Xu
· Jinjuan Xiang
· Tingting Li
· Junshuai Chai
· Jiahui Duan
· Kai Han
· Xiaolei Wang
· Wenwu Wang
· Tianchun Ye
- 卷 69
- 期 3
- 页码 1561-1567
- Institute of Electrical and Electronics Engineers (IEEE)
- ISSN: 0018-9383
- DOI: 10.1109/ted.2021.3139285
