铁电器件课题组（王晓磊）
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Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFETs
2017
期刊
IEEE Transactions on Electron Devices
作者
Xiaolei Wang
· Jinjuan Xiang
· Kai Han
· Shengkai Wang
· Jun Luo
· Chao Zhao
· Tianchun Ye
· Henry H. Radamson
· Eddy Simoen
· Wenwu Wang
- 卷 64
- 期 6
- 页码 2611-2616
- Institute of Electrical and Electronics Engineers (IEEE)
- ISSN: 0018-9383
- DOI: 10.1109/ted.2017.2688489
