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Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/HfₓZr₁₋ₓO₂/Interlayer/Si (MFIS) Gate Structure
2021
期刊
IEEE Transactions on Electron Devices
作者
Fengbin Tian
· Shujing Zhao
· Hao Xu
· Jinjuan Xiang
· Tingting Li
· Wenjuan Xiong
· Jiahui Duan
· Junshuai Chai
· Kai Han
· Xiaolei Wang
· Wenwu Wang
· Tianchun Ye
- 页码 1-7
- Institute of Electrical and Electronics Engineers (IEEE)
- ISSN: 0018-9383
- DOI: 10.1109/ted.2021.3114663
