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The Effect of Interface Traps at the Si/SiO₂ Interface on the Transient Negative Capacitance of Ferroelectric FETs
2021
期刊
IEEE Transactions on Electron Devices
作者
Xiaoqing Sun
· Yuanyuan Zhang
· Jinjuan Xiang
· Kai Han
· Xiaolei Wang
· Wenwu Wang
· Tianchun Ye
- 页码 1-6
- Institute of Electrical and Electronics Engineers (IEEE)
- ISSN: 0018-9383
- DOI: 10.1109/ted.2021.3097008
