铁电器件课题组（王晓磊）
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Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device with high-k/metal gate structure
2010
期刊
Applied Physics Letters
作者
Xiaolei Wang
· Kai Han
· Wenwu Wang
· Shijie Chen
· Xueli Ma
· Dapeng Chen
· Jing Zhang
· Jun Du
· Yuhua Xiong
· Anping Huang
- 卷 96
- 期 15
- 页码 152907
- AIP Publishing
- ISSN: 0003-6951
- DOI: 10.1063/1.3399359
