先进材料平台
分享到
Marked enhancement in the efficiency of deep ultraviolet light-emitting diodes by using a Al x Ga1-x N carrier reservoir layer
2019
期刊
Applied Physics Express
作者
Longfei He
· Wei Zhao
· Kang Zhang
· Chenguang He
· Hualong Wu
· Xiaoyan Liu
· Xingjun Luo
· Shuti Li
· Zhitao Chen
- 卷 12
- 期 6
- 页码 062013
- Japan Society of Applied Physics
- ISSN: 1882-0778
- DOI: 10.7567/1882-0786/ab22df
