The implementation of semi-conductors may require the use of silicon based compounds. For this purpose, silane- nitrous oxide mixtures are widely used. Kinetic studies have shown that the decomposition of silane occurs readily compared to the one of N2O, and involves the formation of H2. Consequently, auto-ignition delay times of H2-N2O- Ar mixtures, with equivalence ratio ranging from 0.5 to 2, have been determinate in the temperature range 1300- 2200 K at pressure of 304 and 912 kPa. It has been shown that the increase of pressure involves a decrease of delays whereas variations of equivalence ratio have little effect. Moreover, it has been shown that the use of a sub- mechanism involving excited OH chemistry significantly increases predictive capacities of the existing model.