Gong's Display Technology Lab

new display technology & flexible opto-electronics

 

 

欢迎访问新型显示技术实验室!新型显示技术实验室成立于2017年4月,由广东省科学院半导体研究所学科带头人龚政教授创立。该实验室主要从事新型显示材料、器件及应用方面的研究。面向显示领域巨大的市场需求和产业化需求,研发基于Micro-LED、量子点等材料和器件的新一代显示技术,以满足高分辨率、低功耗、长寿命、响应速度快的一些应用场景:如可穿戴电子消费品、智能眼镜、智能手表、虚拟现实头盔、高清电视等。

本实验室诚邀海内外各级人才加盟,包括资深研究员/副研究员/青年研究员/助理研究员等岗位若干。

欢迎与我联系,招聘具体信息参见:职位招聘

 

代表性论文

1. [Invited Review] Layer-Scale and Chip-Scale Transfer Techniques for Functional Devices and Systems: A Review,Nanomaterials 11 (4), 842 (2021)

2. Wafer-Scale Micro-LEDs Transferred onto an Adhesive Film for Planar and Flexible Displays, Adv. Mater. Technol.  2020, 2000549

3.【Invited】: Applications and challenges of Micro-pixelated light-emitting diode arrays,SID Symposium Digest of Technical Papers ,2018

4. "Direct LED writing of submicron resist patterns: Towards the fabrication of individually-addressable InGaN submicron stripe-shaped LED arrays",Nano Research 7 (12), 1849-1860(2014)

5. "Micro-LED pumped polymer laser: A discussion of future pump sources for organic lasers", Lasers & Photonics Review. 7, No. 6, 1065–1078 (2013)  

6. "CMOS-controlled color-tunable smart display", IEEE Photonics Journal 4,1639(2012)  

7."Size-dependent efficiency and efficiency droop of blue InGaN micro-light emitting diodes", Applied Physics Letters 101 (23), 231110(2012)

8. "Hybrid organic/GaN photonic crystal light-emitting diode", Applied Physics Letters 101 (14), 141122, 2012

9. Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes", Journal of Applied Physics 107 (2010) 013103 

10. Matrix-addressable micropixellated InGaN light-emitting diodes with uniform emission and increased light output", IEEE Transactions on Electron Devices 54 (2007) 2650-2658. 

11. "A Vertically Integrated CMOS Microsystem for Time-Resolved Fluorescence Analysis", IEEE Transactions on Biomedical Circuits and Systems 4 (2010) 437-444. 

12. "High-Speed Visible Light Communications Using Individual Pixels in a Micro Light-Emitting Diode Array", IEEE Photonics Technology Letters 22 (2010) 1346-1348. 

13. "Microstripe-array InGaN light-emitting diodes with individually addressable elements", IEEE Photonics Technology Letters 18 (2006) 1681-1683. 

14. "Formation of GaAs/AlGaAs and InGaAs/GaAs nanorings by droplet molecular-beam epitaxy", Applied Physics Letters 87 (2005)093116.

15. "Surface morphology control of strained InAs/GaAs(331)A films: From nanowires to island-pit pairs", Applied Physics Letters 86 (2005)013104.

16. "Complex quantum ring structures formed by droplet epitaxy", Applied Physics Letters  89 (2006)031921.

 

 

 

Micro-LED显示系统及应用

Micro-LED技术在近十几年来随着GaN蓝光LED芯片技术逐渐成熟而发展起来,并在最近开始引起人们广泛的关注。Micro-LED作为新一代显示技术,其高亮度、高可靠性及反应时间快、低耗电等特点,在可穿戴、柔性显示、透明显示、车载显示等领域具有极广阔的应用前景。这项新技术已陆续吸引了众多跨国公司积极投入。例如,2014 年苹果斥资 7亿美金收购了微LED 屏幕技术公司 LuxVue;2016年,Facebook收购了英国mLED; 2017年,Google 注资瑞典公司Glo,发展Micro-LED全彩技术;2017年末,三星展出基于Micro-LED的巨型电视拼接墙(准确的讲是小间距LED电视),把Micro-LED 显示技术的商业化发展推进到了一个新的高度。

本方向主要开发高分辨率Micro-LED显示器以及其在VR/AR、智能手表、google glass、可穿戴电子产品等领域的应用。

 

Read more